IXTF6N200P3
MOSFET N-CH 2000V 4A I4PACManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTF6N200P3 is an N-Channel Power MOSFET from the Polar P3™ series. This through-hole component features a drain-source voltage (Vdss) of 2000V and a continuous drain current (Id) of 4A at 25°C. With a maximum power dissipation of 215W (Tc) and a low on-resistance (Rds On) of 4.2 Ohms at 3A and 10V, it is designed for high-voltage applications. The ISOPLUS i4-PAC™ package provides excellent thermal performance and isolation. Key parameters include input capacitance (Ciss) of 3700pF at 25V and gate charge (Qg) of 143 nC at 10V. This device is suitable for use in high-voltage power conversion, industrial power supplies, and renewable energy systems.
Additional Information
Series: Polar P3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUSi5-Pak™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 215W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 2000 V |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700 pF @ 25 V |
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