IXTF2N300P3
MOSFET N-CH 3000V 1.6A I4PACManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTF2N300P3 is an N-Channel Polar P3™ Series MOSFET designed for high-voltage applications. This component features a maximum drain-source voltage (Vdss) of 3000 V and a continuous drain current (Id) of 1.6 A at 25°C. With a low on-resistance (Rds On) of 21 Ohms maximum at 1 A and 10 V Vgs, it offers efficient power handling with a maximum power dissipation of 160 W. The device is packaged in an ISOPLUS i4-PAC™ through-hole configuration, providing robust thermal performance. Key parameters include a gate charge (Qg) of 73 nC and input capacitance (Ciss) of 1890 pF at specified voltages. It is suitable for applications requiring high voltage switching, including power supplies, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: Polar P3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUSi5-Pak™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 21Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 3000 V |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 25 V |
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