IXTF250N075T
MOSFET N-CH 75V 140A I4PACManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTF250N075T is a high-performance N-Channel TrenchMV™ MOSFET designed for demanding power applications. Featuring a 75V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 140A at 25°C (Tc), this device offers exceptional power handling with a maximum power dissipation of 200W (Tc). The low on-resistance (Rds On) of 4.4mOhm at 50A and 10V gate drive ensures efficient operation. Key parameters include a gate charge (Qg) of 200 nC at 10V and an input capacitance (Ciss) of 9900 pF at 25V. The IXYS IXTF250N075T utilizes the ISOPLUS i4-PAC™ package for through-hole mounting, providing robust thermal performance across an operating temperature range of -55°C to 175°C (TJ). This component is well-suited for applications in industrial power, automotive systems, and high-power switching.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 140A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9900 pF @ 25 V |
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