IXTF230N085T
MOSFET N-CH 85V 130A I4PACManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTF230N085T is an N-Channel Power MOSFET from the TrenchMV™ series, featuring an 85V drain-to-source breakdown voltage and a continuous drain current capability of 130A (Tc). This device offers a low on-resistance of 5.3 mOhm at 50A and 10V Vgs, with a maximum power dissipation of 200W (Tc). The component utilizes Metal Oxide technology and is housed in the ISOPLUS i4-PAC™ through-hole package, suitable for demanding power applications. Key parameters include a gate charge of 187 nC (max) at 10V Vgs and input capacitance of 9900 pF (max) at 25V Vds. This MOSFET is engineered for high-power switching applications across industrial, automotive, and high-performance computing sectors.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250mA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 187 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9900 pF @ 25 V |
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