IXTF200N10T
MOSFET N-CH 100V 90A I4PACManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTF200N10T is an N-Channel Trench MOSFET designed for demanding applications. This component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 90A at 25°C. With a low on-resistance of 7mOhm at 50A and 10V gate-source voltage, it offers efficient power handling up to 156W (Tc). The device utilizes a through-hole mounting style within the ISOPLUS i4-PAC™ package, facilitating thermal management. Key electrical characteristics include a gate charge (Qg) of 152 nC at 10V and input capacitance (Ciss) of 9400 pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for high-power switching and power management solutions across various industrial sectors.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: 45 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |