IXTF1R4N450
MOSFET N-CH 4500V 1.4A I4PACManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTF1R4N450 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 4500 V and a continuous drain current (Id) capability of 1.4 A at 25°C (Tc), with a maximum power dissipation of 190 W (Tc). The Rds On is specified at a maximum of 40 Ohms with an Id of 50 mA and Vgs of 10 V. Key parameters include a Gate Charge (Qg) of 88 nC (Max) at 10 V and an input capacitance (Ciss) of 3300 pF (Max) at 25 V. The device operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 6V (Max) at 250µA. It is housed in the ISOPLUS i4-PAC™ package, a through-hole mounting type, suitable for applications in power supplies, industrial motor control, and high-voltage switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 40Ohm @ 50mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 6V @ 250µA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 4500 V |
| Gate Charge (Qg) (Max) @ Vgs | 88 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
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