IXTF1N400
MOSFET N-CH 4000V 1A I4PACManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTF1N400 is an N-Channel power MOSFET designed for high voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 4000V and a continuous Drain current (Id) of 1A at 25°C, with a maximum power dissipation of 160W at the same temperature. The Rds On is specified at 60 Ohms maximum for 500mA and 10V Vgs. Key parameters include Gate Charge (Qg) of 78 nC and Input Capacitance (Ciss) of 2530 pF, both measured under specified conditions. It utilizes a through-hole mounting type within the ISOPLUS i4-PAC™ package. This component is suitable for use in applications requiring robust high-voltage switching capabilities. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1A (Tc) |
| Rds On (Max) @ Id, Vgs | 60Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 4000 V |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2530 pF @ 25 V |
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