IXTF03N400
MOSFET N-CH 4000V 300MA I4PACManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTF03N400 is an N-channel power MOSFET designed for high-voltage applications. This device features a drain-source breakdown voltage (Vdss) of 4000V and a continuous drain current (Id) of 300mA at 25°C (Tc). With a maximum power dissipation of 70W (Tc), it offers robust performance in demanding environments. The MOSFET utilizes Metal Oxide technology and is housed in the ISOPLUS i4-PAC™ package, a through-hole mounting style suitable for power applications. Key parameters include a typical gate charge (Qg) of 16.3 nC and input capacitance (Ciss) of 435 pF, both specified at 10V and 25V respectively. The on-resistance (Rds On) is a maximum of 300 Ohms at 150mA and 10V. This component is prevalent in power supply, industrial automation, and high-voltage switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Tc) |
| Rds On (Max) @ Id, Vgs | 300Ohm @ 150mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 4000 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 435 pF @ 25 V |
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