IXTF02N450
MOSFET N-CH 4500V 200MA I4PACManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTF02N450 is a high-voltage N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 4500V and a continuous drain current (Id) of 200mA at 25°C. With a maximum power dissipation of 78W, it offers robust performance in challenging environments. The device boasts a low gate charge of 10.4 nC at 10V and an input capacitance (Ciss) of 256 pF at 25V. Its ON-resistance (Rds On) is 750 Ohms maximum at 10mA and 10V. The IXTF02N450 is housed in an ISOPLUS i4-PAC™ package, a through-hole mounting type designed for thermal management. Operating temperature ranges from -55°C to 150°C. This MOSFET is suitable for high-voltage power switching applications in sectors such as industrial power supplies, renewable energy systems, and medical equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | i4-Pac™-5 (3 Leads) |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Tc) |
| Rds On (Max) @ Id, Vgs | 750Ohm @ 10mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 250µA |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 4500 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 256 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFK90N20Q
MOSFET N-CH 200V 90A TO264AA
IXFH15N80
MOSFET N-CH 800V 15A TO247AD
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
