IXTD5N100A
MOSFET N-CH 1000V 5A DIEManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTD5N100A is an N-Channel MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 5 A at 25°C. The MOSFET utilizes Metal Oxide technology, offering efficient switching characteristics. Supplied as a bare Die for direct integration into advanced power module designs, the IXTD5N100A is suitable for power supply units, industrial motor drives, and high-voltage power conversion systems. It is packaged for surface mounting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | Die |
| Drain to Source Voltage (Vdss) | 1000 V |
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