IXTC75N10
MOSFET N-CH 100V 72A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTC75N10 is a high-performance N-Channel Power MOSFET from the MegaMOS™ series. This device features a maximum Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 72A at 25°C (Tc). With a low on-resistance of 20mOhm at 37.5A and 10V Vgs, it offers excellent conduction efficiency. The MOSFET is packaged in an ISOPLUS220™ package, suitable for through-hole mounting, and supports a maximum power dissipation of 230W (Tc). Key parameters include a gate charge (Qg) of 260 nC at 10V and input capacitance (Ciss) of 4500 pF at 25V. Operating temperature range is -55°C to 150°C (TJ). This component is widely utilized in power switching applications within industrial and consumer electronics sectors.
Additional Information
Series: MegaMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 37.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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