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IXTC36P15P

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IXTC36P15P

MOSFET P-CH 150V 22A ISOPLUS220

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS IXTC36P15P is a P-Channel MOSFET from the PolarP™ series, packaged in an ISOPLUS220™ through-hole configuration. This component features a drain-source voltage (Vdss) of 150 V and a continuous drain current (Id) of 22 A at 25°C (Tc), with a maximum power dissipation of 150 W (Tc). The on-resistance (Rds On) is specified at 120 mOhm maximum at 18 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 55 nC at 10 V and input capacitance (Ciss) of 2950 pF at 25 V. The device operates across a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is utilized in power switching applications across various industries including industrial motor control, power supplies, and automotive electronics.

Additional Information

Series: PolarP™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseISOPLUS220™
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C22A (Tc)
Rds On (Max) @ Id, Vgs120mOhm @ 18A, 10V
FET Feature-
Power Dissipation (Max)150W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageISOPLUS220™
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)150 V
Gate Charge (Qg) (Max) @ Vgs55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2950 pF @ 25 V

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