IXTC26N50P
MOSFET N-CH 500V 15A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTC26N50P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series. This component features a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 15A at 25°C (Tc), with a maximum power dissipation of 130W (Tc). With a low on-resistance (Rds On) of 260mOhm at 13A and 10V gate drive, and a gate charge (Qg) of 65 nC at 10V, this MOSFET is designed for efficient power switching. The device utilizes Metal Oxide technology and is housed in an ISOPLUS220™ package for through-hole mounting. Key parameters include an input capacitance (Ciss) of 3600 pF at 25V and a gate-source breakdown voltage (Vgs(max)) of ±30V. This component is suitable for applications in power supplies, motor control, and industrial power systems.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF @ 25 V |
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