IXTC240N055T
MOSFET N-CH 55V 132A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS TrenchMV™ IXTC240N055T is a high-performance N-channel power MOSFET designed for demanding applications. This component features a 55V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 132A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance (Rds On) of 4mOhm at 50A and 10V gate drive ensures efficient power transfer. Key parameters include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 7600 pF at 25V. Housed in an ISOPLUS220™ package, this through-hole mounted MOSFET is suitable for industrial, telecommunications, and automotive power management systems. It operates across a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage of ±20V.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 132A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 25 V |
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