IXTC200N10T
MOSFET N-CH 100V 101A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTC200N10T is an N-Channel Power MOSFET from the TrenchMV™ series. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 101A at 25°C (Tc). The Rds On is specified at a maximum of 6.3mOhm at 50A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 152 nC at 10V and an Input Capacitance (Ciss) of 9400 pF at 25V. This device offers a maximum power dissipation of 160W (Tc) and is housed in an ISOPLUS220™ package, designed for through-hole mounting. The operating temperature range is from -55°C to 175°C (TJ). This MOSFET is suitable for applications in power conversion, motor control, and industrial power systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 101A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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