IXTC180N085T
MOSFET N-CH 85V 110A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTC180N085T is an N-Channel Power MOSFET designed for high-efficiency power conversion. This component features a drain-source voltage (Vdss) of 85V and a continuous drain current (Id) of 110A at 25°C, with a maximum power dissipation of 150W. The low on-resistance (Rds On) is specified at 6.1mOhm at 25A and 10V gate drive. Key electrical parameters include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 8800 pF at 25V. The device operates with a gate-source voltage range of ±20V and has a threshold voltage (Vgs(th)) of 4V. It is housed in an ISOPLUS220™ package for through-hole mounting and operates across a temperature range of -55°C to 175°C. This MOSFET is utilized in applications such as industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8800 pF @ 25 V |
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