IXTC160N10T
MOSFET N-CH 100V 83A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTC160N10T is an N-Channel Power MOSFET from the TrenchMV™ series, featuring a 100V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 83A at 25°C (Tc). This device offers a low on-resistance (Rds On) of 7.5mOhm at 25A and 10V (Vgs), with a maximum power dissipation of 140W (Tc). The IXTC160N10T is housed in an ISOPLUS220™ package, designed for through-hole mounting. Key electrical characteristics include a gate charge (Qg) of 132 nC at 10V and input capacitance (Ciss) of 6600 pF at 25V. The MOSFET operates within a temperature range of -55°C to 175°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V. This component is suitable for applications in industrial power supplies, motor control, and electric vehicle powertrains.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 132 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V |
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