IXTC13N50
MOSFET N-CH 500V 12A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTC13N50 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous drain current (Id) of 12 A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 400 mOhm at 6.5 A and 10 V gate-source voltage (Vgs). With a gate charge (Qg) of 120 nC at 10 V and input capacitance (Ciss) of 2800 pF at 25 V, it offers efficient switching characteristics. The IXTC13N50 is housed in an ISOPLUS220™ package for through-hole mounting, providing a maximum power dissipation of 140 W. Its operating temperature range is -55°C to 150°C. This MOSFET is suitable for use in power supplies, motor control, and industrial applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 25 V |
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