IXTC110N25T
MOSFET N-CH 250V 50A ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTC110N25T is an N-Channel Power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) capability of 50A at 25°C (Tc). The low on-resistance of 27mOhm at 55A and 10V gate drive voltage (Vgs) ensures efficient power transfer. With a maximum power dissipation of 180W (Tc), the IXTC110N25T is suitable for high-power switching and linear applications. Key parameters include a gate charge (Qg) of 157 nC at 10V and input capacitance (Ciss) of 9400 pF at 25V. The device operates across a temperature range of -55°C to 150°C (TJ). Packaged in an ISOPLUS220™ through-hole mount, this IXYS MOSFET is utilized in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | ISOPLUS220™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
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