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IXTC102N25T

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IXTC102N25T

MOSFET N-CH 250V ISOPLUS220

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTC102N25T is an N-Channel Power MOSFET designed for high-voltage applications. Featuring a Drain-to-Source Voltage (Vdss) of 250V and packaged in the ISOPLUS220™ through-hole configuration, this component offers robust performance for demanding power control tasks. Its construction utilizes advanced Metal Oxide technology, ensuring efficient switching characteristics. This device is commonly employed in industrial automation, power supply units, and electric vehicle charging systems where reliable high-voltage switching is paramount. The IXYS IXTC102N25T is supplied in tube packaging for efficient integration into manufacturing processes.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseISOPLUS220™
Mounting TypeThrough Hole
Operating Temperature-
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs-
FET Feature-
Power Dissipation (Max)-
Vgs(th) (Max) @ Id-
Supplier Device PackageISOPLUS220™
Drain to Source Voltage (Vdss)250 V

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