IXTC102N20T
MOSFET N-CH 200V ISOPLUS220Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTC102N20T is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 200 V, this through-hole component is housed in the ISOPLUS220™ package. Its Metal Oxide technology ensures efficient power switching. This MOSFET is commonly utilized in industrial power control, high-voltage power supplies, and electric vehicle power systems where robust performance and reliable operation are critical. The ISOPLUS220™ package offers enhanced thermal management characteristics for high-power density designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUS220™ |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | - |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | ISOPLUS220™ |
| Drain to Source Voltage (Vdss) | 200 V |
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