IXTA90N15T
MOSFET N-CH 150V 90A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTA90N15T is a high-performance N-Channel Trench MOSFET designed for demanding power applications. This device features a Drain-Source Voltage (Vdss) of 150V and a continuous Drain current (Id) of 90A at 25°C with a maximum power dissipation of 455W (Tc). The low on-resistance (Rds On) of 20mOhm is achieved at 45A and 10V Vgs. Key parameters include a gate charge (Qg) of 80nC at 10V and input capacitance (Ciss) of 4100pF at 25V. The IXTA90N15T utilizes a TO-263AA surface mount package, suitable for high-density board designs and operating across an extended temperature range of -55°C to 175°C (TJ). This component is commonly employed in industrial power supplies, electric vehicle charging, and high-power motor control systems.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 455W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 25 V |
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