IXTA90N075T2
MOSFET N-CH 75V 90A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA90N075T2 is a TrenchT2™ series N-Channel Power MOSFET designed for demanding applications. This component features a 75V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 90A at 25°C (Tc), with a maximum power dissipation of 180W (Tc). The low on-resistance of 10mOhm at 25A and 10V (Vgs) is facilitated by its trench technology. Key parameters include a gate charge (Qg) of 54 nC at 10V and input capacitance (Ciss) of 3290 pF at 25V. The IXTA90N075T2 is housed in a TO-263AA surface mount package, suitable for high-power density designs. It operates across a wide temperature range of -55°C to 175°C (TJ) and supports a gate-source voltage (Vgs) of up to ±20V. This device finds application in power conversion, motor control, and industrial power systems.
Additional Information
Series: TrenchT2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3290 pF @ 25 V |
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