IXTA8N50P
MOSFET N-CH 500V 8A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTA8N50P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series. This device features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 8 A at 25°C (Tc). With a maximum power dissipation of 150 W (Tc), it offers a low on-resistance (Rds On) of 800 mOhm at 4 A and 10 V. The gate charge (Qg) is a maximum of 20 nC at 10 V, and the input capacitance (Ciss) is 1050 pF at 25 V. Designed for surface mounting, it is packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB (TO-263AA) configuration. This component is suitable for applications in power supplies, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 100µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 25 V |
Request a Quote
Clients Also Buy
IXGH28N60B3D1
IGBT 600V 66A 190W TO247AD
IXTY1R6N50P
MOSFET N-CH 500V 1.6A TO252
IXTY2R4N50P
MOSFET N-CH 500V 2.4A TO252
