IXTA88N085T7
MOSFET N-CH 85V 88A TO263-7Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTA88N085T7 TrenchMV™ N-Channel MOSFET offers 85V drain-source breakdown voltage and a continuous drain current of 88A at 25°C (Tc). This surface-mount component, housed in a TO-263-7 package, features a maximum power dissipation of 230W (Tc). Key electrical characteristics include a low Rds(on) of 11mOhm at 25A and 10V, a gate charge (Qg) of 69 nC at 10V, and input capacitance (Ciss) of 3140 pF at 25V. Designed for demanding applications, it operates within a temperature range of -55°C to 175°C. This particular MOSFET is utilized in sectors such as industrial power supplies, automotive electronics, and renewable energy systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-263-7 (IXTA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3140 pF @ 25 V |
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