IXTA88N085T
MOSFET N-CH 85V 88A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTA88N085T is an N-Channel power MOSFET from the TrenchMV™ series. This component features a Drain-Source Voltage (Vdss) of 85V and a continuous drain current (Id) of 88A at 25°C (Tc), with a maximum power dissipation of 230W (Tc). It offers a low on-resistance (Rds On) of 11mOhm at 25A and 10V. Key parameters include a gate charge (Qg) of 69nC (max) at 10V and input capacitance (Ciss) of 3140pF (max) at 25V. Designed for efficient switching, it operates at a junction temperature range of -55°C to 175°C and is supplied in a TO-263-3, D2PAK surface mount package. This component is suitable for applications in power conversion and motor control.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3140 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTA152N085T7
MOSFET N-CH 85V 152A TO263-7
IXTA180N085T
MOSFET N-CH 85V 180A TO263
IXTA180N085T7
MOSFET N-CH 85V 180A TO263-7