IXTA80N10T7
MOSFET N-CH 100V 80A TO263-7Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTA80N10T7 is a TrenchMV™ series N-Channel Power MOSFET. This device features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 80 A at 25°C (Tc). The IXTA80N10T7 offers a low on-resistance (Rds On) of 14 mOhm maximum at 25 A and 10 V, with a gate threshold voltage (Vgs(th)) of 4.5 V maximum. Input capacitance (Ciss) is specified at a maximum of 3040 pF at 25 V, and gate charge (Qg) is 60 nC maximum at 10 V. The component supports a drive voltage of 10 V for optimal Rds On performance and has a maximum gate-source voltage (Vgs) of ±30V. Power dissipation (Pd) is 230 W at 25°C (Tc). This surface mount component is packaged in a TO-263-7 (IXTA) or D2PAK configuration, suitable for operation across a temperature range of -55°C to 175°C (TJ). Applications include power supplies, motor control, and power switching systems.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | TO-263-7 (IXTA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3040 pF @ 25 V |
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