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IXTA76N075T

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IXTA76N075T

MOSFET N-CH 75V 76A TO263

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTA76N075T is a TrenchMV™ series N-Channel Power MOSFET designed for demanding applications. This device features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 76A at 25°C (Tc), with a maximum power dissipation of 176W (Tc). The low on-resistance (Rds On) of 12mOhm at 25A and 10V gate-source voltage (Vgs) minimizes conduction losses. Key parameters include a gate charge (Qg) of 57 nC at 10V and input capacitance (Ciss) of 2580 pF at 25V. The IXTA76N075T is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface-mount package, suitable for efficient thermal management. Its operating temperature range is -55°C to 175°C (TJ). This component is utilized in industries such as industrial power supplies, electric vehicle charging, and high-power motor control.

Additional Information

Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Rds On (Max) @ Id, Vgs12mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)176W (Tc)
Vgs(th) (Max) @ Id4V @ 50µA
Supplier Device PackageTO-263AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2580 pF @ 25 V

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