IXTA70N085T
MOSFET N-CH 85V 70A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTA70N085T is an N-Channel TrenchMV™ MOSFET designed for demanding power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 85V and a continuous Drain Current (Id) of 70A at 25°C (Tc). With a maximum power dissipation of 176W (Tc), it offers robust thermal performance in a TO-263AA surface mount package. The Rds On (Max) is specified at 13.5mOhm at 25A and 10V, complemented by a Gate Charge (Qg) of 59 nC at 10V. Its input capacitance (Ciss) is a maximum of 2570 pF at 25V. This device is suitable for applications in industrial and automotive sectors requiring high current handling and efficient switching. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 176W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2570 pF @ 25 V |
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