IXTA6N50P
MOSFET N-CH 500V 6A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTA6N50P is a PolarHV™ series N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 6A at 25°C. The IXTA6N50P offers a maximum on-resistance (Rds On) of 1.1 Ohm at 3A and 10V gate drive. Key parameters include a gate charge (Qg) of 14.6 nC at 10V and input capacitance (Ciss) of 740 pF at 25V. With a maximum power dissipation of 100W, this MOSFET is housed in a TO-263-3, D2PAK surface mount package. It is suitable for power conversion, industrial automation, and electric vehicle charging applications. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 50µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 740 pF @ 25 V |
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