IXTA5N60P
MOSFET N-CH 600V 5A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA5N60P is an N-Channel Power MOSFET from the PolarHV™ series. This device features a 600 V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 5 A at 25°C with a thermal resistance (Tc) of 1.7 Ohms at 2.5 A and 10 V. With a maximum power dissipation of 100 W (Tc), it utilizes a TO-263AA surface mount package. Key parameters include a gate charge (Qg) of 14.2 nC at 10 V and input capacitance (Ciss) of 750 pF at 25 V. This component is suitable for applications in high-voltage power conversion, industrial power supplies, and renewable energy systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
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