IXTA5N50P
MOSFET N-CH 500V 4.8A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTA5N50P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series, featuring a 500V drain-source voltage and continuous drain current of 4.8A at 25°C. This device is housed in a TO-263AA surface-mount package, offering a maximum power dissipation of 89W. Key electrical parameters include a maximum on-resistance (Rds On) of 1.4 Ohms at 2.4A and 10V gate drive, and a gate charge (Qg) of 12.6 nC at 10V. The input capacitance (Ciss) is specified at 620 pF at 25V. Designed for demanding applications, this MOSFET is suitable for use in power supply, lighting, and industrial motor control sectors. It operates within an ambient temperature range of -55°C to 150°C.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
Request a Quote
Clients Also Buy
IXGH28N60B3D1
IGBT 600V 66A 190W TO247AD
IXTY1R6N50P
MOSFET N-CH 500V 1.6A TO252
IXTY2R4N50P
MOSFET N-CH 500V 2.4A TO252
