IXTA4N60P
MOSFET N-CH 600V 4A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA4N60P is a high-voltage N-channel Power MOSFET from the PolarHV™ series. This device features a drain-source breakdown voltage (Vdss) of 600V and a continuous drain current (Id) of 4A at 25°C (Tc). With a maximum power dissipation of 89W (Tc), it is designed for demanding applications. The on-resistance (Rds On) is specified at a maximum of 2 Ohms at 2A, 10V, with a gate-source voltage (Vgs) range of ±30V. Key electrical parameters include a gate charge (Qg) of 13 nC at 10V and input capacitance (Ciss) of 635 pF at 25V. The IXTA4N60P is packaged in a TO-263-3, D2PAK surface-mount package, enabling efficient thermal management. This component is suitable for use in power supply, industrial, and renewable energy applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 100µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 635 pF @ 25 V |
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