IXTA3N60P
MOSFET N-CH 600V 3A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA3N60P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series. This device features a Drain-to-Source Voltage (Vdss) of 600V and a continuous Drain current (Id) of 3A at 25°C. With a maximum power dissipation of 70W (Tc) and a low on-resistance of 2.9 Ohms at 500mA and 10V (Vgs), it is designed for efficient power switching applications. The surface mount TO-263-3, D2PAK package facilitates integration into compact designs. Key parameters include a gate charge (Qg) of 9.8 nC at 10V and an input capacitance (Ciss) of 411 pF at 25V. This component is suited for use in power supplies, industrial motor control, and renewable energy systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 411 pF @ 25 V |
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