IXTA3N50P
MOSFET N-CH 500V 3.6A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA3N50P is a high-voltage N-Channel Power MOSFET from the PolarHV™ series, designed for demanding applications. This component features a 500V drain-source breakdown voltage (Vdss) and can handle a continuous drain current of 3.6A at 25°C (Tc). With a maximum power dissipation of 70W (Tc), it is suitable for applications requiring robust thermal performance. The MOSFET exhibits a low on-resistance (Rds On) of 2 Ohms maximum at 1.8A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 9.3 nC typical at 10V and input capacitance (Ciss) of 409 pF maximum at 25V. The IXTA3N50P is packaged in a TO-263-3, D2PAK surface-mount configuration for efficient board integration. Operating temperature range is from -55°C to 150°C (TJ). This device finds application in power supplies, industrial motor control, and other high-voltage switching environments.
Additional Information
Series: PolarHV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 50µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 409 pF @ 25 V |
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