IXTA3N110-TRL
MOSFET N-CH 1100V 3A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTA3N110-TRL is an N-Channel Power MOSFET designed for high voltage applications. This component features a drain-to-source voltage (Vdss) of 1100V and a continuous drain current (Id) of 3A at 25°C. With a maximum on-resistance (Rds On) of 4 Ohms at 1.5A and 10V, and a power dissipation of 150W at 25°C (Tc), it is suitable for demanding power conversion scenarios. Key parameters include a gate charge (Qg) of 39 nC at 10V and input capacitance (Ciss) of 1300 pF at 25V. The device utilizes MOSFET technology and comes in a TO-263 (D2PAK) surface mount package, supplied on tape and reel. This component finds application in power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1100 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
Request a Quote
Clients Also Buy
IXFK90N20Q
MOSFET N-CH 200V 90A TO264AA
IXFH20N60
MOSFET N-CH 600V 20A TO-247AD
IXTH20N50D
MOSFET N-CH 500V 20A TO247
