IXTA3N110
MOSFET N-CH 1100V 3A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA3N110 is an N-Channel Power MOSFET designed for high voltage applications. This device features a Drain-Source Voltage (Vdss) of 1100V and a continuous Drain Current (Id) of 3A at 25°C, with a maximum power dissipation of 150W. The IXTA3N110 offers a low on-resistance of 4 Ohms maximum at 1.5A and 10V Vgs, with a Gate Charge (Qg) of 42 nC maximum and input capacitance (Ciss) of 1350 pF maximum. Packaged in a TO-263-3, D2PAK surface mount configuration, it operates efficiently across a wide temperature range of -55°C to 150°C. This component is commonly utilized in power supply units, industrial motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1100 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 25 V |
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