IXTA340N04T4-7
MOSFET N-CH 40V 340A TO263-7Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA340N04T4-7 is a high-performance N-Channel Trench MOSFET designed for demanding power applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 340A at 25°C (Tc), with a maximum power dissipation of 480W (Tc). The low on-resistance of 1.7mOhm is specified at 100A and a gate-source voltage (Vgs) of 10V, facilitated by a drive voltage of 10V. Key electrical characteristics include a maximum gate charge (Qg) of 256 nC at 10V and an input capacitance (Ciss) of 13000 pF at 25V. The IXTA340N04T4-7 is packaged in a TO-263-7 (IXTA) surface-mount configuration, suitable for operation across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in industries such as industrial automation, electric vehicle power conversion, and high-power switching power supplies.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 340A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 (IXTA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 256 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 25 V |
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