IXTA340N04T4
MOSFET N-CH 40V 340A TO263AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTA340N04T4 is a Trench MOSFET, N-Channel device with a Drain-Source Voltage (Vdss) of 40V. It offers a high continuous drain current of 340A at 25°C (Tc) and a maximum power dissipation of 480W (Tc). Key electrical specifications include a low Rds On of 1.7mOhm at 100A, 10V, and a gate charge (Qg) of 256 nC at 10V. Input capacitance (Ciss) is 13000 pF at 25V. This MOSFET is designed for surface mounting in a TO-263AA package, with an operating temperature range of -55°C to 175°C (TJ). It is suitable for high-power switching applications across industries such as electric vehicles, industrial power supplies, and renewable energy systems.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 340A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 256 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 25 V |
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