IXTA32N20T
MOSFET N-CH 200V 32A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA32N20T is an N-Channel Trench MOSFET designed for demanding applications requiring high voltage and current handling. This component features a Drain-to-Source voltage (Vdss) of 200V and a continuous drain current (Id) of 32A at 25°C (Tc). With a maximum power dissipation of 200W (Tc) and a low on-resistance (Rds On) of 72mOhm at 16A and 10V, it ensures efficient power transfer. The TO-263AA package facilitates surface mounting for optimized thermal management. Key parameters include a gate charge (Qg) of 38 nC at 10V and input capacitance (Ciss) of 1760 pF at 25V. This MOSFET is suitable for industries such as industrial power supplies, motor control, and renewable energy systems, operating across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 16A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1760 pF @ 25 V |
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