IXTA2N80
MOSFET N-CH 800V 2A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA2N80 is an N-Channel Power MOSFET designed for demanding applications. This device offers a high drain-source voltage (Vdss) of 800V and a continuous drain current (Id) of 2A at 25°C (Tc). With a maximum power dissipation of 54W (Tc), it features a low on-resistance (Rds On) of 6.2 Ohms at 500mA and 10V gate-source voltage. The IXTA2N80 has a gate charge (Qg) of 22 nC maximum at 10V and input capacitance (Ciss) of 440 pF maximum at 25V. It utilizes advanced MOSFET technology and is supplied in a TO-263AA package for surface mounting. This component is suitable for use in power supply, lighting, and industrial control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.2Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 54W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 25 V |
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