IXTA2N100
MOSFET N-CH 1000V 2A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXTA2N100 is an N-Channel Power MOSFET designed for high voltage applications. This component offers a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous drain current (Id) of 2 A at 25°C. With a maximum power dissipation of 100 W (Tc), it is suitable for demanding power management tasks. The IXTA2N100 features low on-resistance characteristics, with a maximum Rds On of 7 Ohms at 1 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 18 nC at 10 V and input capacitance (Ciss) of 825 pF at 25 V. The surface mount TO-263-3, D2PAK package provides efficient thermal management. This MOSFET is utilized in industrial power supplies, renewable energy systems, and high-voltage switching applications. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 7Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 825 pF @ 25 V |
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