IXTA270N04T4-7
MOSFET N-CH 40V 270A TO263-7Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA270N04T4-7 is an N-Channel Power MOSFET designed for high-current applications. This component features a 40V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 270A at 25°C (Tc). The IXTA270N04T4-7 offers a low on-resistance (Rds On) of 2.2mOhm maximum at 50A and 10V gate-source voltage. With a maximum power dissipation of 375W (Tc), this MOSFET is suitable for demanding thermal environments. Key parameters include a gate charge (Qg) of 182 nC maximum at 10V and input capacitance (Ciss) of 9140 pF maximum at 25V. The device is housed in a TO-263-7 (IXTA) surface-mount package. This MOSFET finds application in industries such as industrial power supplies, automotive systems, and renewable energy solutions.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 270A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 (IXTA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 182 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9140 pF @ 25 V |
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