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IXTA270N04T4

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IXTA270N04T4

MOSFET N-CH 40V 270A TO263AA

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

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The IXYS IXTA270N04T4 is a Trench series N-Channel MOSFET designed for demanding power applications. This surface mount component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 270A at 25°C, with a maximum power dissipation of 375W (Tc). The low on-resistance of 2.2mOhm is achieved at 50A and a gate-source voltage (Vgs) of 10V, indicating high efficiency. Key parameters include a gate charge (Qg) of 182 nC (max) at 10V and input capacitance (Ciss) of 9140 pF (max) at 25V. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-263AA package. This MOSFET is suitable for high-power switching and motor control applications across various industrial sectors.

Additional Information

Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C270A (Tc)
Rds On (Max) @ Id, Vgs2.2mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)375W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263AA
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs182 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9140 pF @ 25 V

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