IXTA24N65X2
MOSFET N-CH 650V 24A TO263AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXTA24N65X2, an N-Channel MOSFET from the Ultra X2 series, offers robust performance for high-voltage applications. This component features a 650V drain-to-source breakdown voltage (Vdss) and a continuous drain current capability of 24A at 25°C (Tc). With a maximum power dissipation of 390W (Tc) and a low on-resistance (Rds On) of 145mOhm at 12A and 10V gate drive, it is engineered for efficient power switching.
The IXTA24N65X2 is housed in a TO-263AA surface mount package, simplifying integration into dense board designs. Key electrical characteristics include a gate charge (Qg) of 36 nC at 10V and an input capacitance (Ciss) of 2060 pF at 25V. The operating temperature range is -55°C to 150°C (TJ). This device is suitable for use in power supply units, industrial motor control, and renewable energy systems.
Additional Information
Series: Ultra X2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 32 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 390W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2060 pF @ 25 V |
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