Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

IXTA240N055T7

Banner
productimage

IXTA240N055T7

MOSFET N-CH 55V 240A TO263-7

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXTA240N055T7 is an N-Channel Power MOSFET from the TrenchMV™ series. This device features a drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) capability of 240A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3.6mOhm at 25A and 10V, it offers efficient power handling with a maximum power dissipation of 480W (Tc). The MOSFET is housed in a surface-mount TO-263-7 (IXTA) package, suitable for high-density applications. Key parameters include a gate charge (Qg) of 170nC at 10V and input capacitance (Ciss) of 7600pF at 25V. This component is utilized in demanding applications across industries such as electric vehicle charging, industrial power supplies, and solar inverters.

Additional Information

Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C240A (Tc)
Rds On (Max) @ Id, Vgs3.6mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)480W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263-7 (IXTA)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)55 V
Gate Charge (Qg) (Max) @ Vgs170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7600 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
IXTA152N085T7

MOSFET N-CH 85V 152A TO263-7

product image
IXTA180N085T

MOSFET N-CH 85V 180A TO263

product image
IXTA180N085T7

MOSFET N-CH 85V 180A TO263-7