IXTA240N055T
MOSFET N-CH 55V 240A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA240N055T is a high-performance N-Channel TrenchT2™ MOSFET designed for demanding power applications. This surface-mount component features a 55V drain-to-source voltage rating and a continuous drain current capability of 240A at 25°C (Tc), with a maximum power dissipation of 480W (Tc). It offers a low on-resistance of 3.6mOhm at 25A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 170 nC at 10V and input capacitance (Ciss) of 7600 pF at 25V. The device is packaged in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB configuration and operates within a temperature range of -55°C to 175°C (TJ). This IXYS MOSFET is suitable for use in industries such as industrial power supplies, automotive electronics, and renewable energy systems.
Additional Information
Series: TrenchT2™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 240A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 480W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 25 V |
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