IXTA230N04T4
MOSFET N-CH 40V 230A TO263AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA230N04T4 is an N-Channel Trench MOSFET designed for high-power applications. This device features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain current (Id) capability of 230A at 25°C (Tc). With a maximum power dissipation of 340W (Tc), it offers a low on-resistance of 2.9 mOhm at 115A and 10V (Vgs). Key parameters include a Gate Charge (Qg) of 140 nC @ 10V and input capacitance (Ciss) of 7400 pF @ 25V. The IXTA230N04T4 is packaged in a TO-263AA (TO-263-3, D2PAK) surface mount configuration, suitable for operation across a temperature range of -55°C to 175°C (TJ). This component is utilized in industries such as automotive and industrial power systems.
Additional Information
Series: TrenchRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.9mOhm @ 115A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 340W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 25 V |
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