IXTA220N055T7
MOSFET N-CH 55V 220A TO263-7Manufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS IXTA220N055T7 is a high-performance N-Channel Power MOSFET from the TrenchMV™ series, designed for demanding applications. This component features a 55V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 220A at 25°C (Tc), with a maximum power dissipation of 430W (Tc). The Rds(on) is rated at a low 4mOhm at 25A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 158 nC (max) at 10V Vgs and input capacitance (Ciss) of 7200 pF (max) at 25V Vds. It operates within a temperature range of -55°C to 175°C (TJ). The IXTA220N055T7 is housed in a TO-263-7 (IXTA) surface mount package, suitable for high-power switching in industries such as automotive, renewable energy, and industrial power supplies. The maximum gate-source voltage is ±20V.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263-7 (IXTA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |
Request a Quote
Clients Also Buy
IXTA152N085T7
MOSFET N-CH 85V 152A TO263-7
IXTA180N085T
MOSFET N-CH 85V 180A TO263
IXTA180N085T7
MOSFET N-CH 85V 180A TO263-7