IXTA220N055T
MOSFET N-CH 55V 220A TO263Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXTA220N055T is an N-Channel TrenchMV™ Series MOSFET designed for high-power applications. This component offers a 55V drain-to-source voltage (Vdss) and a continuous drain current capability of 220A at 25°C (Tc), with a maximum power dissipation of 430W (Tc). The low on-resistance specification of 4mOhm at 25A and 10V gate-source voltage (Vgs) ensures efficient power transfer. Featuring a surface mount TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package, this MOSFET is suitable for demanding thermal management. Key electrical parameters include a gate charge (Qg) of 158 nC at 10V Vgs and input capacitance (Ciss) of 7200 pF at 25V Vds. The device operates within a temperature range of -55°C to 175°C (TJ). This component is commonly utilized in power switching, motor control, and electric vehicle applications.
Additional Information
Series: TrenchMV™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 430W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7200 pF @ 25 V |
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